The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Dec. 02, 2008
Yung-chang Lin, Tai-Chung Hsien, TW;
Kuei-sheng Wu, Tainan County, TW;
San-fu Lin, Pingtung County, TW;
Hui-shen Shih, Chang-Hua Hsien, TW;
Yung-Chang Lin, Tai-Chung Hsien, TW;
Kuei-Sheng Wu, Tainan County, TW;
San-Fu Lin, Pingtung County, TW;
Hui-Shen Shih, Chang-Hua Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A contact efuse structure includes a silicon layer and a contact contacting the silicon layer with one end. When a voltage is applied to the contact, a void is formed at the end of the contact, and thus the contact is open. Such structure may be utilized in an efuse device or a read only memory. A method of making a contact efuse device and a method of making a read only memory are also disclosed.