The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Apr. 07, 2006
Chih-han Lin, Tainan, TW;
Kun-ei Chen, Beiman Township, Tainan County, TW;
Chih-Han Lin, Tainan, TW;
Kun-Ei Chen, Beiman Township, Tainan County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of forming a dual damascene includes forming first, second and third material layers sequentially over a substrate. The first, second and third material layers have first, second and third thicknesses, respectively. An opening is etched within the first material layer while a portion or all of the thickness of the third layer is simultaneously removed. The ratio of the depth of the opening and the thickness of the third material layer removed, correspond to an etch selectivity of the first material layer and the second material layer. The etching operation may be automatically terminated to produce the opening with a predetermined depth.