The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Aug. 18, 2008
Applicants:
Tuung Luoh, Hsinchu, TW;
Chin-ta Su, Hsinchu, TW;
Ta-hung Yang, Hsinchu, TW;
Kuang-chao Chen, Hsinchu, TW;
Shing-ann Luo, Hsinchu, TW;
Inventors:
Tuung Luoh, Hsinchu, TW;
Chin-Ta Su, Hsinchu, TW;
Ta-Hung Yang, Hsinchu, TW;
Kuang-Chao Chen, Hsinchu, TW;
Shing-Ann Luo, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
An HDP-CVD process is described, including a deposition step conducted in an HDP-CVD chamber and a pre-heating step that is performed outside of the HDP-CVD chamber before the deposition step and pre-heats a wafer to a temperature higher than room temperature and required in the HDP-CVD process deposition step.