The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Sep. 22, 2008
Nishant Sinha, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Eugene Marsh, Boise, ID (US);
Neil Greeley, Boise, ID (US);
John Smythe, Boise, ID (US);
Nishant Sinha, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Eugene Marsh, Boise, ID (US);
Neil Greeley, Boise, ID (US);
John Smythe, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.