The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Mar. 28, 2006
Yuji Tsukamoto, Wilmington, MA (US);
H. Steven Tomozawa, Derry, NH (US);
Sam Yong Kim, Lexington, MA (US);
Thomas Hamelin, Georgetown, MA (US);
Yuji Tsukamoto, Wilmington, MA (US);
H. Steven Tomozawa, Derry, NH (US);
Sam Yong Kim, Lexington, MA (US);
Thomas Hamelin, Georgetown, MA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.