The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Dec. 08, 2009
Yunjun Ho, Boise, ID (US);
Matt Meyers, Boise, ID (US);
Kevin L. Beaman, Boise, ID (US);
Gregory J. Light, Boise, ID (US);
Yunjun Ho, Boise, ID (US);
Matt Meyers, Boise, ID (US);
Kevin L. Beaman, Boise, ID (US);
Gregory J. Light, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include methods of forming isolation structures. A trench may be formed to extend into a semiconductor material. Polysilazane may be formed within the trench, and then exposed to steam. A maximum temperature of the polysilazane during the steam exposure may be less than or equal to about 500° C. The steam exposure may convert all of the polysilazane to silicon oxide. The silicon oxide may be annealed under an inert atmosphere. A maximum temperature of the silicon oxide during the annealing may be from about 700° C. to about 1000° C. In some embodiments, the isolation structures are utilized to isolate nonvolatile memory components from one another.