The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Dec. 14, 2006
Yezdi Dordi, Palo Alto, CA (US);
John M. Boyd, Hillsboro, OR (US);
Fritz C. Redeker, Fremont, CA (US);
William Thie, Mountain View, CA (US);
Tiruchirapalli Arunagiri, Fremont, CA (US);
Hyungsuk Alexander Yoon, San Jose, CA (US);
Yezdi Dordi, Palo Alto, CA (US);
John M. Boyd, Hillsboro, OR (US);
Fritz C. Redeker, Fremont, CA (US);
William Thie, Mountain View, CA (US);
Tiruchirapalli Arunagiri, Fremont, CA (US);
Hyungsuk Alexander Yoon, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.