The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Oct. 31, 2008
Chin-lung Chen, Hsinchu County, TW;
Chun-ching Yu, Taoyuan County, TW;
Jung-ching Chen, Hsinchu, TW;
Ming-tsung Tung, Hsinchu, TW;
Chin-Lung Chen, Hsinchu County, TW;
Chun-Ching Yu, Taoyuan County, TW;
Jung-Ching Chen, Hsinchu, TW;
Ming-Tsung Tung, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsinchu, TW;
Abstract
A semiconductor device and an IC chip are described. The deep N-well region is configured in a substrate. The P-well region surrounds a periphery of the deep N-well region. The gate structure is disposed on the substrate of the deep N-well region. The P-body region is configured in the deep N-well region at one side of the gate structure. The first N-type doped region is configured in the P-body region. The second N-type doped region is configured pin the deep N-well region at the other side of the gate structure. The first isolation structure is disposed between the gate structure and the second N-type doped region. The N-type isolation ring is configured in the deep N-well region and corresponding to an edge of the deep N-well region, wherein a doping concentration of the N-type isolation ring is higher than that of the deep N-well region.