The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Feb. 18, 2009
Michael Hargrove, Clinton Corners, NY (US);
Frank Bin Yang, Mahwah, NJ (US);
Rohit Pal, Fishkill, NY (US);
Michael Hargrove, Clinton Corners, NY (US);
Frank Bin Yang, Mahwah, NJ (US);
Rohit Pal, Fishkill, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods are provided for forming a semiconductor device comprising a semiconductor substrate. In accordance with an exemplary embodiment, a method comprises the steps of forming a high-k dielectric layer overlying the semiconductor substrate, forming a metal-comprising gate layer overlying the high-k dielectric layer, forming a doped silicon-comprising capping layer overlying the metal-comprising gate layer, and depositing a silicon-comprising gate layer overlying the doped silicon-comprising capping layer.