The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Jan. 12, 2011
Niraj B. Rana, Boise, ID (US);
Nishant Sinha, Boise, ID (US);
Prashant Raghu, Boise, ID (US);
Jim J. Hofmann, Boise, ID (US);
Neil Joseph Greeley, Boise, ID (US);
Niraj B. Rana, Boise, ID (US);
Nishant Sinha, Boise, ID (US);
Prashant Raghu, Boise, ID (US);
Jim J. Hofmann, Boise, ID (US);
Neil Joseph Greeley, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.