The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Aug. 13, 2010
Yongsoon Choi, Yongin-si, KR;
Kyung-moon Byun, Seoul, KR;
Eunkee Hong, Seongnam-si, KR;
Eun-kyung Baek, Suwon-si, KR;
Yongsoon Choi, Yongin-si, KR;
Kyung-moon Byun, Seoul, KR;
Eunkee Hong, Seongnam-si, KR;
Eun-kyung Baek, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of fabricating a semiconductor microstructure, the method including forming a lower material layer on a semiconductor substrate, the lower material layer including a nitride of a Group III-element; forming a mold material layer on the lower material layer; forming an etching mask on the mold material layer, the etching mask being for forming a structure in the mold material layer; anisotropic-etching the mold material layer and the lower material layer by using the etching mask; and isotropic-etching the mold material layer and the lower material layer.