The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Dec. 31, 2008
Applicants:
Robert J. Falster, London, GB;
Vladimir Voronkov, Merano, IT;
Gabriella Borionetti, Novara, IT;
Inventors:
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates.