The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2011

Filed:

Jun. 26, 2009
Applicants:

Sung Hyun OH, Cheongju-si, KR;

Byung Ho Nam, Daegu, KR;

Inventors:

Sung Hyun Oh, Cheongju-si, KR;

Byung Ho Nam, Daegu, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A mask includes mask patterns formed over a frontside of a substrate and a phase grating formed over a backside of the substrate. The mask patterns correspond to a layout of diagonal patterns extending in a direction rotated toward a predetermined direction from an axis of a rectangular coordinate system. The phase grating extends in a direction parallel to the extending direction of the mask patterns. The phase grating includes first and second phase regions alternately arranged over the backside of the substrate with a phase difference of 180° therebetween. The first and second phase regions induce a phase interference that blocks a zero-order light of an exposure light incident to the substrate and allows a primary light to be incident to the mask patterns.


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