The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Nov. 30, 2007
Edward P. Hammond, Iv, Hillsborough, CA (US);
Rodolfo P. Belen, San Francisco, CA (US);
Alexander M. Paterson, San Jose, CA (US);
Brian K. Hatcher, San Jose, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Dan Katz, San Jose, CA (US);
Edward P. Hammond, IV, Hillsborough, CA (US);
Rodolfo P. Belen, San Francisco, CA (US);
Alexander M. Paterson, San Jose, CA (US);
Brian K. Hatcher, San Jose, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Dan Katz, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.