The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Jan. 26, 2010
Yoshimi Takahashi, Beppu, JP;
Masood Murtuza, Sugarland, TX (US);
Rajiv Dunne, Murphy, TX (US);
Satyendra Singh Chauhan, Sugarland, TX (US);
Yoshimi Takahashi, Beppu, JP;
Masood Murtuza, Sugarland, TX (US);
Rajiv Dunne, Murphy, TX (US);
Satyendra Singh Chauhan, Sugarland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming stacked electronic articles using a through substrate via (TSV) wafer includes mounting a first carrier wafer to a top side of the TSV wafer using a first adhesive material that has a first debonding temperature. The TSV wafer is thinned from a bottom side of the TSV wafer to form a thinned TSV wafer. A second carrier wafer is mounted to the bottom side of the TSV wafer using a second adhesive material that has a second debonding temperature that is higher as compared to the first debonding temperature. The thinned TSV wafer is heated to a temperature above the first debonding temperature to remove the first carrier wafer from the thinned TSV wafer. At least one singulated IC die is bonded to TSV die formed on the top surface of the thinned TSV wafer to form the stacked electronic article.