The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2011

Filed:

Aug. 12, 2009
Applicants:

Akira Fujimura, Saratoga, CA (US);

Michael Tucker, Los Altos, CA (US);

Inventors:

Akira Fujimura, Saratoga, CA (US);

Michael Tucker, Los Altos, CA (US);

Assignee:

D2S, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device using a photomask and optical lithography is disclosed, wherein circular patterns on the semiconductor wafer are formed by using circular patterns on the photomask, which is manufactured using a charged particle beam writer. In one embodiment, circular patterns of varying sizes have been formed on the photomask using a single character projection (CP) character, by varying the charged particle beam dosage. A method for fracturing circular patterns is also disclosed, either using circular CP characters or using VSB shots wherein the union of the plurality of VSB shots is different than the set of desired patterns.


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