The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Jun. 22, 2009
Shankar Venkataraman, Santa Clara, CA (US);
Hiroshi Hamana, Hyogo, JP;
Manuel A. Hernandez, Santa Clara, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Paul Edward Gee, San Jose, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Hiroshi Hamana, Hyogo, JP;
Manuel A. Hernandez, Santa Clara, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Paul Edward Gee, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.