The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2011

Filed:

Jun. 05, 2008
Applicants:

Deodatta Vinayak Shenai-khatkhate, Danvers, MA (US);

Huazhi LI, Somerville, MA (US);

Qing Min Wang, North Andover, MA (US);

Inventors:

Deodatta Vinayak Shenai-Khatkhate, Danvers, MA (US);

Huazhi Li, Somerville, MA (US);

Qing Min Wang, North Andover, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.


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