The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Nov. 30, 2009
Kenji Matsumoto, Nirasaki, JP;
Shigetoshi Hosaka, Nirasaki, JP;
Junichi Koike, Sendai, JP;
Koji Neishi, Sendai, JP;
Kenji Matsumoto, Nirasaki, JP;
Shigetoshi Hosaka, Nirasaki, JP;
Junichi Koike, Sendai, JP;
Koji Neishi, Sendai, JP;
Tokyo Electron Limited, Tokyo, JP;
Tohoku University, Sendai-shi, JP;
Abstract
A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper.