The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Oct. 03, 2008
D. Jeffrey Lischer, Acton, MA (US);
John (Bon-woong) Koo, Andover, MA (US);
Peter F. Kurunczi, Cambridge, MA (US);
Shardul Patel, Woburn, MA (US);
Wilhelm P. Platow, Somerville, MA (US);
D. Jeffrey Lischer, Acton, MA (US);
John (Bon-Woong) Koo, Andover, MA (US);
Peter F. Kurunczi, Cambridge, MA (US);
Shardul Patel, Woburn, MA (US);
Wilhelm P. Platow, Somerville, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile