The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Jun. 15, 2010
Yi-jen Lo, Taipei County, TW;
Yu-shan Chiu, Taipei County, TW;
Kuo-hui Su, Taipei, TW;
Chiang-hung Lin, Taipei County, TW;
Yi-Jen Lo, Taipei County, TW;
Yu-Shan Chiu, Taipei County, TW;
Kuo-Hui Su, Taipei, TW;
Chiang-Hung Lin, Taipei County, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A method for forming a semiconductor structure is provided. The method includes providing a substrate; forming a dielectric layer on the substrate; forming a conductor pattern on a main surface of the dielectric layer, the conductor pattern having a top surface and sidewalls; and performing a selective atomic layer deposition (ALD) process to selectively deposit a conformal metal layer onto the top surface and sidewalls of the conductor pattern, but without depositing onto the main surface of the dielectric layer substantially.