The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Jun. 15, 2009
Naoyuki Koyama, Tsukuba, JP;
Kouji Haga, Hitachi, JP;
Masato Yoshida, Tsukuba, JP;
Keizou Hirai, Hitachiota, JP;
Toranosuke Ashizawa, Hitachinaka, JP;
Youiti Machii, Tsuchiura, JP;
Naoyuki Koyama, Tsukuba, JP;
Kouji Haga, Hitachi, JP;
Masato Yoshida, Tsukuba, JP;
Keizou Hirai, Hitachiota, JP;
Toranosuke Ashizawa, Hitachinaka, JP;
Youiti Machii, Tsuchiura, JP;
Hitachi Chemical Co., Ltd., Tokyo, JP;
Abstract
The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.