The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Jun. 15, 2007
Applicants:
Chih-hao Chen, Hsinchu, TW;
Chia-cheng Chou, Keelung, TW;
Ming-chung Liang, Hsinchu, TW;
Keng-chu Lin, Ping-Tung, TW;
Tzu-li Lee, Yunlin, TW;
Inventors:
Chih-Hao Chen, Hsinchu, TW;
Chia-Cheng Chou, Keelung, TW;
Ming-Chung Liang, Hsinchu, TW;
Keng-Chu Lin, Ping-Tung, TW;
Tzu-Li Lee, Yunlin, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A system and method for improving the performance of an integrated circuit by lowering RC delay time is provided. A preferred embodiment comprises adding a reactive etch gas to the ash/flush plasma process following a low-k dielectric etch. The illustrative embodiments implement a removal of the damage layer that is formed during a low-k dielectric etch.