The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Oct. 10, 2008
Frank Bin Yang, Mahwah, NJ (US);
Rohit Pal, Fishkill, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
Frank Bin Yang, Mahwah, NJ (US);
Rohit Pal, Fishkill, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
The disclosed subject matter relates to semiconductor transistor devices and associated fabrication techniques that can be utilized to form silicide contacts having an increased effective size, relative to conventional silicide contacts. A semiconductor device fabricated in accordance with the processes disclosed herein includes a layer of semiconductor material and a gate structure overlying the layer of semiconductor material. A channel region is formed in the layer of semiconductor material, the channel region underlying the gate structure. The semiconductor device also includes source and drain regions in the layer of semiconductor material, wherein the channel region is located between the source and drain regions. Moreover, the semiconductor device includes facet-shaped silicide contact areas overlying the source and drain regions.