The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Dec. 16, 2008
Masakazu Goto, Yokohama, JP;
Nobutoshi Aoki, Yokohama, JP;
Takashi Izumida, Yokohama, JP;
Kimitoshi Okano, Yokohama, JP;
Satoshi Inaba, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Masakazu Goto, Yokohama, JP;
Nobutoshi Aoki, Yokohama, JP;
Takashi Izumida, Yokohama, JP;
Kimitoshi Okano, Yokohama, JP;
Satoshi Inaba, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A fin transistor includes: a substrate; a plurality of semiconductor fins formed on the substrate; a gate electrode covering a channel region of the semiconductor fins; and a member as a stress source for the semiconductor fins included in a region of the gate electrode and the region provided between the semiconductor fins, and the member being made of a different material from the gate electrode.