The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
May. 19, 2009
Jae-hwa Park, Gyeonggi-do, KR;
Jong-min Baek, Gyeonggi-do, KR;
Gil-heyun Choi, Seoul, KR;
Hee-sook Park, Seoul, KR;
Jae-Hwa Park, Gyeonggi-do, KR;
Jong-Min Baek, Gyeonggi-do, KR;
Gil-Heyun Choi, Seoul, KR;
Hee-Sook Park, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods of forming integrated circuit devices include forming a gate electrode on a substrate and forming a nitride layer on a sidewall and upper surface of the gate electrode. The nitride layer is then anisotropically oxidized under conditions that cause a first portion of the nitride layer extending on the upper surface of the gate electrode to be more heavily oxidized relative to a second portion of the nitride layer extending on the sidewall of the gate electrode. A ratio of a thickness of an oxidized first portion of the nitride layer relative to a thickness of an oxidized second portion of the nitride layer may be in a range from about 3:1 to about 7:1.