The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Oct. 28, 2010
Jeong-yun Lee, Yongin-si, KR;
Ken Tokashiki, Seongnam-si, KR;
Kyoung-sub Shin, Seongnam-si, KR;
Jun-ho Yoon, Suwon-si, KR;
Hong Cho, Yongin-si, KR;
Jeong-Yun Lee, Yongin-si, KR;
Ken Tokashiki, Seongnam-si, KR;
Kyoung-Sub Shin, Seongnam-si, KR;
Jun-Ho Yoon, Suwon-si, KR;
Hong Cho, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Provided are a method of fabricating a semiconductor device and synchronous pulse plasma etching equipment for the same. The method includes outputting a first radio frequency (RF) power and a control signal and outputting a second RF power. The first RF power is pulse-width modulated to have a first frequency and a first duty ratio, and is applied to a first electrode in a plasma etching chamber. The control signal includes information on a phase of the first RF power. The second RF power is pulse-width modulated to have the first frequency and a second duty ratio smaller than the first duty ratio, is applied to a corresponding second electrode among second electrodes in the plasma etching chamber, and is supplied for a time section in which the first RF power is supplied.