The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Dec. 15, 2006
Kazuo Okada, Gunma, JP;
Katsuhiko Kitagawa, Gunma, JP;
Takashi Noma, Gunma, JP;
Shigeki Otsuka, Chiba, JP;
Hiroshi Yamada, Gunma, JP;
Shinzo Ishibe, Gunma, JP;
Yuichi Morita, Gunma, JP;
Noboru Okubo, Saitama, JP;
Hiroyuki Shinogi, Gunma, JP;
Mitsuru Okigawa, Aichi, JP;
Kazuo Okada, Gunma, JP;
Katsuhiko Kitagawa, Gunma, JP;
Takashi Noma, Gunma, JP;
Shigeki Otsuka, Chiba, JP;
Hiroshi Yamada, Gunma, JP;
Shinzo Ishibe, Gunma, JP;
Yuichi Morita, Gunma, JP;
Noboru Okubo, Saitama, JP;
Hiroyuki Shinogi, Gunma, JP;
Mitsuru Okigawa, Aichi, JP;
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Sanyo Semiconductor Co., Ltd., Gunma, JP;
Abstract
The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.