The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Oct. 31, 2008
Yukiteru Matsui, Yokohama, JP;
Masako Kinoshita, Yokohama, JP;
Seiro Miyoshi, Yokohama, JP;
Yoshikuni Tateyama, Hiratsuka, JP;
Takeshi Nishioka, Yokohama, JP;
Hiroyuki Yano, Yokohama, JP;
Yukiteru Matsui, Yokohama, JP;
Masako Kinoshita, Yokohama, JP;
Seiro Miyoshi, Yokohama, JP;
Yoshikuni Tateyama, Hiratsuka, JP;
Takeshi Nishioka, Yokohama, JP;
Hiroyuki Yano, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.