The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Oct. 19, 2007
Kangguo Cheng, Guilderland, NY (US);
Louis Lu-chen Hsu, Fishkill, NY (US);
Jack Allan Mandelman, Flat Rock, NC (US);
Haining Yang, Wappingers Falls, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Louis Lu-Chen Hsu, Fishkill, NY (US);
Jack Allan Mandelman, Flat Rock, NC (US);
Haining Yang, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes semiconductor device structures characterized by reduced junction capacitance and drain induced barrier lowering. The semiconductor device structure of the design structure includes a semiconductor layer and a dielectric layer disposed between the semiconductor layer and the substrate. The dielectric layer includes a first dielectric region with a first dielectric constant and a second dielectric region with a second dielectric constant that is greater than the first dielectric constant.