The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Feb. 12, 2008
Jun-hee Lim, Seoul, KR;
Choong-sun Shin, Gyeonggi-do, KR;
Jun-hee Lim, Seoul, KR;
Choong-sun Shin, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor integrated circuit is disclosed which includes a main transistor and at least one of a fuse transistor or an anti-fuse transistor ('fuse/anti-fuse transistor'). Each transistor type includes an active region formed in a semiconductor substrate, a gate stack comprising a gate insulation layer and a gate electrode sequentially formed on the active region, and source/drain regions separated across the gate stack, but the gate insulation layer of the fuse/anti-fuse transistor is selectively damaged during fabrication.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile