The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Dec. 12, 2005
Tetsuya Shibata, Nirasaki, JP;
Yutaka Takahashi, Kai, JP;
Kota Umezawa, Nirasaki, JP;
Masahiko Tomita, Nirasaki, JP;
Tetsuya Shibata, Nirasaki, JP;
Yutaka Takahashi, Kai, JP;
Kota Umezawa, Nirasaki, JP;
Masahiko Tomita, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.