The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Mar. 01, 2004
Masaru Sasaki, Amagasaki, JP;
Yoshiro Kabe, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Yoshiro Kabe, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A polysilicon electrode layer () (a first electrode layer) is formed by forming a polysilicon film on a gate oxide film () on a silicon wafer (). A tungsten layer () (a second electrode layer) is formed on this polysilicon electrode layer (). In addition, a barrier layer () is formed on the polysilicon electrode layer () before the formation of the tungsten layer (). Etching is then conducted using a silicon nitride layer () as the etching mask. Next, an oxide insulating film () is formed on an exposed surface of the polysilicon layer () by plasma oxidation wherein a process gas containing oxygen gas and hydrogen gas is used at a process temperature not less than 300° C. With this method, a selective oxidation of the polysilicon electrode layer () can be carried out without oxidizing the tungsten layer ().