The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2011

Filed:

Jan. 09, 2008
Applicants:

Min LI, Dublin, CA (US);

Cheng T. Horng, San Jose, CA (US);

Cherng Chyi Han, San Jose, CA (US);

Yue Liu, Fremont, CA (US);

Yu-hsia Chen, San Jose, CA (US);

Ru-ying Tong, San Jose, CA (US);

Inventors:

Min Li, Dublin, CA (US);

Cheng T. Horng, San Jose, CA (US);

Cherng Chyi Han, San Jose, CA (US);

Yue Liu, Fremont, CA (US);

Yu-Hsia Chen, San Jose, CA (US);

Ru-Ying Tong, San Jose, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01);
U.S. Cl.
CPC ...
Abstract

Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.


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