The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Nov. 04, 2010
Koichi Hirano, Osaka, JP;
Seiichi Nakatani, Osaka, JP;
Shingo Komatsu, Osaka, JP;
Yoshihisa Yamashita, Kyoto, JP;
Takashi Ichiryu, Osaka, JP;
Koichi Hirano, Osaka, JP;
Seiichi Nakatani, Osaka, JP;
Shingo Komatsu, Osaka, JP;
Yoshihisa Yamashita, Kyoto, JP;
Takashi Ichiryu, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A layered film of a three-layer clad foil formed with a first metal layer, a second metal layer, and an inorganic insulating layerinterposed therebetween is prepared. After the second metal layeris partially etched to form a gate electrode, the first metal layeris partially etched to form source/drain electrodesin a region corresponding to the gate electrode. A semiconductor layeris then formed in contact with the source/drain electrodesand on the gate electrodewith the inorganic insulating layerinterposed therebetween. The inorganic insulating layeron the gate electrodefunctions as a gate insulating film, and the semiconductor layerbetween the source/drain electrodeson the inorganic insulating layerfunctions as a channel.