The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Dec. 27, 2007
Applicants:
Ki-ha Hong, Seoul, KR;
Jae-woong Hyun, Uljeongbu-si, KR;
Young-gu Jin, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Inventors:
Ki-ha Hong, Seoul, KR;
Jae-woong Hyun, Uljeongbu-si, KR;
Young-gu Jin, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract
Provided are a capacitorless DRAM and methods of manufacturing the same. The capacitorless DRAM may include a substrate including a source, a drain and a channel, a gate on the channel of the substrate, and a hole reserving unit below the channel.