The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Dec. 31, 2007
Elliot Tan, Portland, OR (US);
Michael K. Harper, Hillsboro, OR (US);
James Jeong, Portland, OR (US);
Elliot Tan, Portland, OR (US);
Michael K. Harper, Hillsboro, OR (US);
James Jeong, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
In general, in one aspect, a method includes forming a hard mask on a semiconductor substrate. A first resist layer is patterned on the hard mask as a first plurality of lines separated by a first defined pitch. The hard mask is etched to a portion of formed thickness to create a first plurality of fins in alignment with the first plurality of lines and the first resist layer is removed. A second resist layer is patterned on the hard mask as a second plurality of lines separated by a second defined pitch. The second plurality of lines is patterned between the first plurality of lines. The hard mask is etched to the portion of the formed thickness to create a second plurality of fins in alignment with the second plurality of lines. The first plurality of hard mask fins and the second plurality of hard mask fins are interwoven and have same thickness.