The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7977245 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 12, 2011

Filed:

Mar. 22, 2006
Applicants:

Ying Xiao, San Jose, CA (US);

Gerardo A. Delgadino, Santa Clara, CA (US);

Karsten Schneider, Dresden, DE;

Inventors:

Ying Xiao, San Jose, CA (US);

Gerardo A. Delgadino, Santa Clara, CA (US);

Karsten Schneider, Dresden, DE;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for etching a dielectric barrier layer with high selectivity to a dielectric bulk insulating layer are provided. In one embodiment, the method includes providing a substrate having a portion of a dielectric barrier layer exposed through a dielectric bulk insulating layer in a reactor, flowing a gas mixture containing Hgas, fluorine containing gas, at least an insert gas into the reactor, and etching the exposed portion of the dielectric barrier layer selectively to the dielectric bulk insulating layer.


Find Patent Forward Citations

Xiao, Ying. (2011). Methods for etching a dielectric barrier layer with high selectivity (U.S. Patent No. 7977245). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7977245

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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