The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Apr. 05, 2005
Yoshitaka Yokota, San Jose, CA (US);
Sundar Ramamurthy, Fremont, CA (US);
Vedapuram Achutharaman, San Jose, CA (US);
Cory Czarnik, Mountain View, CA (US);
Mehran Behdjat, San Jose, CA (US);
Christopher Olsen, Fremont, CA (US);
Yoshitaka Yokota, San Jose, CA (US);
Sundar Ramamurthy, Fremont, CA (US);
Vedapuram Achutharaman, San Jose, CA (US);
Cory Czarnik, Mountain View, CA (US);
Mehran Behdjat, San Jose, CA (US);
Christopher Olsen, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.