The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2011

Filed:

Aug. 18, 2006
Applicants:

Arup Bhattacharyya, Essex Junction, VT (US);

Leonard Forbes, Corvallis, OR (US);

Paul A. Farrar, Bluffton, SC (US);

Inventors:

Arup Bhattacharyya, Essex Junction, VT (US);

Leonard Forbes, Corvallis, OR (US);

Paul A. Farrar, Bluffton, SC (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract

In various method embodiments, a device region in a semiconductor substrate and isolation regions adjacent to the device region are defined. The device region has a channel region and the isolation regions have strain-inducing regions laterally adjacent to the channel regions. The channel region is strained with a desired strain for carrier mobility enhancement, where at least one ion type is implanted with an energy resulting in a peak implant in the strain-inducing regions of the isolation regions. Other aspects and embodiments are provided herein.


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