The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jun. 07, 2006
Applicants:
Tadahiro Ohmi, Sendai, JP;
Akinobu Teramoto, Sendai, JP;
Minoru Honda, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Inventors:
Tadahiro Ohmi, Sendai, JP;
Akinobu Teramoto, Sendai, JP;
Minoru Honda, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Assignees:
Tohoku University, Sendai-shi, JP;
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.