The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jul. 14, 2006
Applicants:
Zailong Bian, Manassas, VA (US);
Xiaolong Fang, Boise, ID (US);
Inventors:
Zailong Bian, Manassas, VA (US);
Xiaolong Fang, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/3105 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods and apparatus are provided. An isolation region is formed by lining a trench formed in a substrate with a first dielectric layer by forming the first dielectric layer adjoining exposed substrate surfaces within the trench using a high-density plasma process, forming a layer of spin-on dielectric material on the first dielectric layer so as to fill a remaining portion of the trench, and densifying the layer of spin-on dielectric material.