The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2011

Filed:

Nov. 16, 2006
Applicants:

Daisuke Kawamura, Yokohama, JP;

Eishi Shiobara, Yokohama, JP;

Tomoyuki Takeishi, Yokkaichi, JP;

Kei Hayasaki, Kamakura, JP;

Yasunobu Onishi, Yokohama, JP;

Shinichi Ito, Yokohama, JP;

Tatsuhiko Higashiki, Fujisawa, JP;

Inventors:

Daisuke Kawamura, Yokohama, JP;

Eishi Shiobara, Yokohama, JP;

Tomoyuki Takeishi, Yokkaichi, JP;

Kei Hayasaki, Kamakura, JP;

Yasunobu Onishi, Yokohama, JP;

Shinichi Ito, Yokohama, JP;

Tatsuhiko Higashiki, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.


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