The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Aug. 22, 2005
Xikun Wang, Sunnyvale, CA (US);
Wei Liu, San Jose, CA (US);
Yan Du, Santa Clara, CA (US);
Mei Hua Shen, Fremont, CA (US);
Xikun Wang, Sunnyvale, CA (US);
Wei Liu, San Jose, CA (US);
Yan Du, Santa Clara, CA (US);
Mei Hua Shen, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In one implementation, a method is provided for etching a high k dielectric material in a plasma etch reactor, the method comprising plasma etching the high k dielectric material with a first plasma gas reactant mixture having BCl. The high k dielectric material may include AlOin a stack having a silicon layer. The etching may include supplying a passivation gas, for example CH, and may further include supplying a diluent gas such as a noble gas, for example He. In some implementations, the etching may be performed with a reactive ion etch process.