The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
May. 15, 2008
Amit Khandelwal, Cupertino, CA (US);
Madhu Moorthy, San Jose, CA (US);
Avgerinog V. Gelatos, Redwood City, CA (US);
Kai Wu, Palo Alto, CA (US);
Amit Khandelwal, Cupertino, CA (US);
Madhu Moorthy, San Jose, CA (US);
Avgerinog V. Gelatos, Redwood City, CA (US);
Kai Wu, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.