The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Jul. 09, 2008
Eric Huang, Jhubei, TW;
Tsung-yi Huang, Hsin-Chu, TW;
Fu-hsin Chen, Jhudong Township, TW;
Chyi-chyuan Huang, Taipei, JP;
Chung-yeh Wu, Taichung, TW;
Eric Huang, Jhubei, TW;
Tsung-Yi Huang, Hsin-Chu, TW;
Fu-Hsin Chen, Jhudong Township, TW;
Chyi-Chyuan Huang, Taipei, JP;
Chung-Yeh Wu, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW, wherein at least one of the pre-HVW, the HVW, and the field ring comprises at least two tunnels; an insulation region over the field ring and a portion of the HVW; a drain region in the HVW and adjacent the insulation region; a gate electrode over a portion the insulation region; and a source region on an opposite side of the gate electrode than the drain region.