The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
May. 12, 2010
Zhiyuan YE, Cupertino, CA (US);
Yihwan Kim, Milpitas, CA (US);
Xiaowei LI, Sunnyvale, CA (US);
Ali Zojaji, Santa Clara, CA (US);
Nicholas C. Dalida, Fremont, CA (US);
Jinsong Tang, Santa Clara, CA (US);
Xiao Chen, San Jose, CA (US);
Arkadii V. Samoilov, Sunnyvale, CA (US);
Zhiyuan Ye, Cupertino, CA (US);
Yihwan Kim, Milpitas, CA (US);
Xiaowei Li, Sunnyvale, CA (US);
Ali Zojaji, Santa Clara, CA (US);
Nicholas C. Dalida, Fremont, CA (US);
Jinsong Tang, Santa Clara, CA (US);
Xiao Chen, San Jose, CA (US);
Arkadii V. Samoilov, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.