The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Nov. 02, 2005
Isao Yokokawa, Gunma, JP;
Hiroji Aga, Gunma, JP;
Kiyoshi Mitani, Gunma, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method for producing a semiconductor wafer, including epitaxially growing a SiGelayer (0<X≦1) on a surface of a silicon single crystal wafer to be a bond wafer; implanting at least one kind of a hydrogen ion or a rare gas ion through the SiGelayer and forming an ion-implanted layer inside the bond wafer; contacting and bonding a surface of the SiGelayer and a surface of a base wafer through an insulator film; then performing delamination at the ion-implanted layer; performing a bonding heat treatment of binding the bonded surfaces; and then removing a Si layer of a delaminated layer transferred to a side of the base wafer by the delamination. Thereby, the method does not cause lattice relaxation in the SiGe layer. Therefore, the method is suitable for production of a semiconductor wafer for high-speed semiconductor devices.