The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Sep. 01, 2009
Naofumi Ohashi, Tokyo, JP;
Yuichi Wada, Toyama, JP;
Nobuo Owada, Tokyo, JP;
Takeshi Taniguchi, Toyama, JP;
Naofumi Ohashi, Tokyo, JP;
Yuichi Wada, Toyama, JP;
Nobuo Owada, Tokyo, JP;
Takeshi Taniguchi, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A manufacturing method of a semiconductor device includes the steps of carrying a substrate in a processing chamber, bringing the processing chamber into a state at a first pressure by supplying a silicon compound gas which contains carbon and hydrogen into the processing chamber, forming a silicon oxide film on the substrate by irradiating a UV light to the silicon compound gas supplied into the processing chamber in the state kept at the first pressure, and decompression process to bring the processing chamber into a state at a second pressure lower than the first pressure. This makes it possible to form the dense silicon oxide film in the trench with high aspect ratio and small width.