The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7955761 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 07, 2011

Filed:

Sep. 18, 2008
Applicant:

Tadao Yasuzato, Tokyo, JP;

Inventor:

Tadao Yasuzato, Tokyo, JP;

Assignee:

Elpida Memory, Inc, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An exposure mask has a rectangular pattern, an auxiliary pattern, a translucent region, and a shielding region. The rectangular pattern includes a transparent region having a dimension equal to or greater than a critical resolution of exposure light. The auxiliary pattern is arranged around the rectangular pattern and includes a transparent region having a dimension smaller than the critical resolution. The translucent region is arranged between the rectangular pattern and the auxiliary pattern for shifting a phase of light transmitted through the rectangular pattern and the auxiliary pattern to an opposite phase. The shielding region is arranged around the auxiliary pattern.


Find Patent Forward Citations

Yasuzato, Tadao. (2011). Exposure mask, pattern formation method, and exposure mask fabrication method (U.S. Patent No. 7955761). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7955761

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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